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Give a flowsheet of program for evaluating corrected peak area.
Use the detailed block diagram.
A student from electromechanical systems class planned to construct a transformer that will cause an actual load resistance of 48.2-ohm to appear as 116.3-ohm to an AC voltage source of 211.3 V rms.
The power density 50km from a transmitting antenna is 0.5 uW/m^2. If the frequency is 2 GHz and the antenna gain is 30 dB, determine the transmitter power.
A three-phase, 3.73kW, 208V, 60Hz induction motor runs at 1746rpm when it delivers rated output power. What are: a) the number of poles of the machine b) the slip at full load
If a seventh-order system has a row of zeros at s^3 and two sign changes below the s^4 row, how many jw poles does the system have
this project is about building a coded lock system using atmega8 by using assembler language. lcd should show your
Now assume that the victim's DNS cache has a genuine NS record for the domain the attacker is targeting. i. Can the attacker still be successful at poisoning the A records for some of the names belonging to the domain?ii. Can the attacker poison th..
Murray Loop Test and Locating Faults, Q.1 (a) Using the Murray Loop test, determine the distance to an earth fault on one of the cores of a uniform three-core underground cable. Ra = 2 ohms, Rb = 1 ohm
Determine the ROM size and contents to implement a function which converts a sign and magnitude number from -5 to +6 to two's complement format.
Determine the input-transformer turns ratio to provide optimum noise performance.
The current through a branch in a linear network is 2 A when the input source is 10 V. If the voltage is reduced to 1 V and the polarity is reversed, the current through the branch is a. - 2 A b. - 0.2 A c. 0.2 A d. Cannot be determined with the in..
Use the simulation timing diagram to compare the worse case time to do an operation with your ALU with the worst case using the 74LS381. State which operation takes the longest and list the time required for both ALU's.
Describe the basic operation of the n-channel MOSFET, the relationship to VGS, VDS an IDS. This would include such things as accumulation, inversion, pinch-off point, etc. Which end is the drain
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