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Use Matlab to charge neutrality equation in order to plot the Fermi level as a function of doping vs. temperature for Si, GaAs, SiC, and GaN. Using Phosphorous as a donor dopant at 1e18, 1e16, 1e14, and 1e12 for each material above, generate plots determining the temperature at which the Fermi level is equal to the intrinsic Fermi level for each doping concentration. Remember that the Intrinsic Fermi level is also a function of temperature.
An IPv4 datagram has arrived with the following information in the header (in hexadecimal): Ox45 00 00 54 00 03 58 50 20 06 00 00 7C 4E 03 02 B4 OE OF 02 a. Is the packet corrupted b. Are there any options
Nominally, the short lead of the diode is the cathode, i.e., the negative lead. However, you can identify the cathode more reliably by noting that one side of the LED's housing has a ?at spot at the base; the terminal closest to this ?at spot is t..
Find the noise temperature for a Cal-Amp C-Band 140105-1 low noise block down converters (LNB) for satellite TV. What is their equivalent series input resistance, and what implications does this have for the circuit design
Determine the number of gates needed to implement a 4-bit carry-lookahead adder, assuming no fan-in constraints. Use AND, OR, and XOR gates with any number of inputs
in the process of sampling an analog signal g(t) is multiplied by a periodic train of rectangular pulses c(t)each of unit area ,given that the pulse repetition frequency of this periodic train is fs and the duration of each rectangular pulse is T
A) Determine the individual residues at the single poles at s = 0 and at s = -1 B)determine the two residues at the complex conjugate poles C) using the inverse laplace transform of the single poles and the complex conjugate poles determine the time..
A discrete-time signal x[n] is periodic with period 8. One period of its DFT harmonic function is {X[0],...,X[7]}={3,4+ j5,- 4 - j3,1+ j5,- 4,1- j5,- 4 + j3,4 - j5}. (a) What is the average value of x[n] (b) What is the signal power of x[n]
Bipolar Junction Transistor, A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively.
Two 12-V batteries are being charged from a 16V generator. The internal resistances are 0.5ohm and 0.8ohm for the batteries and 2ohm for the generator. Find the currents flowing into the positive battery terminals
A torque of 18 N-m is applied to a rotating part. The moment of inertia is 0.078 kg-m2. How much time (in seconds) will it take to rotate the part 180°?
Write a 68000 assembly language subroutine, ROTMEM, which rotates the elements (words-size) of an array stored at location point to by (A0). The depth of the array is stored as the first element.
Let x[n] be a finite sequence that is nonzero for n [N1, N2], and h(n) be a finite sequence that is nonzero n [N3, N4]. Answer the followings: a. For fixed n, what is the range of k that makes h(n-k) nonzero
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