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Let x[n] be a finite sequence that is nonzero for n [N1, N2], and h(n) be a finite sequence that is nonzero n [N3, N4]. Answer the followings:
a. For fixed n, what is the range of k that makes h(n-k) nonzero?
b. What is the range of n for nonzero y[n]?
c. What is the range of n so that the product x[k]h[n-k] is zero?
d. What is the length of y[n]? (y[n] is the convolution of x[n] and h[n])
Determine the input current and the load current and voltage. Also, calculate the power absorbed at the load. Use the data from A above, but assume the load is an open circuit. Determine the input current and the load current and voltag..
Design a BP filter using two-integrator topology. The center frequency is to be 10kHz with a bandwidth of 2kHz. Design to obtain a voltage gain of 26dB.
Memory storage and bit density, A hard disk contains four Platters. Each side of the platter is coated with a magnetic oxide, allowing data to be stored on it. The platters are 3.5 inches in diameter.
Write a C program for the 68HCS12 microcontroller to send the pattern 0x55 to byte-sized Memory Location "OUT1" and then call a delay function. The delay function should generate a delay of two milliseconds.
The phasor voltage Vab in the circuit is 480 /0° V (rms) when no external load is connected to terminals a,b. When a load having an impedance of 100 j0 Ω is connected across a,b, the value of Vab is 252.9822 /-18.3449° V (rms).
If a RAM memory has a 5-to-32 row address decoder and a 6-to-64 column address decoder, and eight pins I/O, what is the size of the memory
An NMOS operating in triode region withVds=0.1V conducts 60μA for Vgs=2V.The device conducts 160μA forVgs=4V. Calculate Vt. If Kn'=25μA/V2 , what is the device W/L What current would flow for Vgs=3V and Vds=0.15V
an unknown semiconductor has Eg=1.1ev and Nv=Nc.it is doped with 10^15 donors,where the donor level is 0.2ev below Ec. given that Ef is 0.25ev below Ec, calculate ni and the concentration of electrons and holes in the semiconductor at 300k.
Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.
Phosphorus atoms, at a concentration of 5*10^16 cm^-3, are added to a pure sample of intrinsic silicon. Assume the phosphorus atoms are distributed homogeneously throughout the silicon sample. What is the fraction by weight of phosphorus
Now assume that the doctor knows that 1 in 100 individuals with symptom G will have the rare disease, and he only orders the test when individuals have symptom G. Given that one of the doctor's patients tests positive.
A semiconductor, in thermal equilibrium, has a hole concentration of p0 = 2x10^16 cm^-3. The minority carrier life time = 3x10^-7 s. (Assume, ni = 10^10 cm^-3)
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