Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
A 9 kVA, 208 V (L-L), 3-phase Y connected stator, synchronous generator has a stator resistance of 0.1 ohm per phase, and a synchronous resistance of 5.6 ohm per phase. The generator is driven by a diesel engine, and is delivering rated kVA at rated voltage. Determine the voltage regulation when the power factor of the load is
(a) 0.8 lagging
An AM receiver is tuned to receive a carrier frequency of 850 KHz and is using low-side injection. What would be the image frequency?
The current flowing through a 300-mH inductance is given by 5exp(-200t) A, in which time t is in seconds. A) Find an expression for the voltage in terms of t. B) Find an expression for the power in terms of t.
Proof the law of s with respect to amnetism. use the figure as guide. show all the steps clearly. - For the circuit in fig. 1. find i1 to i4 using mesh analysis.
If a radio ran for 3 hours on a cheap battery rated at2Ah, how long will the radio run on a battery rated at 5Ah
Assume that vout(t) = Acos(2π ft), and nd an expression for vin(t). Use the results of part (a) to find an expression for the transfer function H (f) = Vout/Vin for the system.
Design the circuit such that the power dissipation is 80μW and the output voltage is vO = 0.06 V when vI is a logic 1.
Describe the characteristics of the series RC filter circuit with the outpu across the resistive component. Distinguish the pass and stop bands with reference to the cutoff frequency. Also state what happens to the circuit complex impedance at the..
Develop a Verilog model of one of the TTL chips listed below. The model should be functionally equivalent, but there will be timing differences. Compare the timing differences between the Verilog FPGA implementation and the TTL chip.
find the current that flows in a silicon bar of 10 micrometerlength having a 5 X4 micrometer cross section and having freeelectron & hole densities of 10^5/cm^3 & 10^15/cm^3 ,respectively, when a 1V is applied end-to-end. Use Mn =1200cm^2/VS; Mp=5..
Use the integral version of Gauss's law to find the electric field E and the electric displacement D in the region . Hence calculate the electrostatic field energy stored in a length l of the capacitor.
Triangular Wave Design There is a need to generate a 12-V ± 10%, 1-kHz triangular wave.- Design the circuit and verify your design using Multisim.
The capacitance of a MOS structure is shown in the attached figure. (n+ polysilicon gate, SiO2 insulator, Si substrate). The plot is not necessarily to scale.
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd