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A waveguide load with an equivalent TE10 wave impedance of 377 must be matched to an air-filled X-band rectangular guide at 10 GHz. A quarter-wave matching transformer is to be used, and is to consist of a section of guide filled with dielectric. Find the required dielectric constant and physical length of the matching section. What restrictions on the load impedance apply to this technique?
Consider a product data sheet for a photo-detector that states an optical power level of -32dbm is need at the photo-detector to specify performance requirement. What is the power level nW (nano Watts)
A 400-kV transmission line has a hot-weather power rating of1400 MVA. If the transmission line is operating in cold weather, itis rated for 2200 MVA (at 400 kV). The transmission line is undercold weather conditions, and the operating voltage is 3..
Explain how a voltage is induced in the secondary winding of a transformer - What purpose does the no-load current of a transformer serve
aims of the project1. to determine the energy uses on farms in middle east .2. to determine the best solar cell the use
A composite analog signal is given in the following expression: x(t)=1.2 sin(2pi60ft)+0.0001cos(2pi1ft) -If this signal was sampled at 1000 Hz, derive the expression for the sampled sequence x[n] with n being the sampling index.
A long hallway has three doors, one at each end and one in themiddle. A switch is located at each door to operate the lights along the hallway. Label the switches X, Y, and Z. Design a logicnetwork to control the lights.
Design, simulate and program a 4-bit, 8-function ALU to implement the operations F2 F1 F0 Output Function S0 - S4 0 0 0 Output = A Input S = A 0 0 1 Output = A Complement S = NOT A 0 1 0 Output = A Plus B S = A + B0 1 1 Output = A Minus B S = A - B
Each subconductor's radius is 10 cm. There are two configurations, the first one is setting subconductors A and B as a bundle, and C and D as another bundle; the second is setting subconductors A and C as a bundle, and B and D as another bundle.
A mosfet amplifier has attribute for wwhich the mid band voltage gain between gate and drain is -27V/V the nmos trensistor has Cgs=0.3 pf and Cdg=0.1 pf. What input capacitance should be
What is the shape of the spectrum of the signal? What is the extent of the spectrum in the frequency domain? What is the unit that is applied to the magnitude of the spectrum?
A Si sample is uniformly doped with phosphorus at 5 E 16 cm^-3. We make a p-n junction by implanting boron atoms into the surface layer. The implanted depth is 0.15 µm. What should the surface concentration of the boron implant
You are designing a PCS base station that operates at 1800 MHz. The receiver is co-located on a tower with UHF police and business radio systems that operate at 450 MHz. Since the the 4th harmonic from the UHF system is directly in the PCS band
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