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npn transistor has a CBJ with area 150 times that of EBJ. If Is= 5 x 10^-15 find the voltage drop across EBJ and CBJ when each is forward biased and conducting a current of 1mA. Also find the forward current each junction would conduct when forward biased with 0.5V.
Determine the output voltage of an op-amp for input voltages of Vi1=200uV at Vi2=140uV. The amplifier has a differential gain of Ad=6000 and the value of CMRR is A. 200 b. 10^5
In code warrior, write a program sequence that places the value in Address $1500 into Accumulator A. Then, AND this value with the value in Address $1501. Save the result in $1502.
An example of a semigroup algorithm is finding the minimum. Develop a parallel algorithm for an n-dimensional hypercube that would determine the minimum data among all processors. Demonstrate your algorithm using a 3 dimensional hypercube
In a MOS cascode amplifier, the cascode transistor is required to raise the output resistance by a factor of 40. If the transistor is operated at Vov = 0.2 V, what must its Va be
our senior design team is designing a force sensor to measure a force signal and analyze the signal with a microcomputer (binary system). The analog force signal is between 10 N and 70 N and has the frequency bandwidth of DC - 1000 Hz.
how the amplifiers should be connected. To proceed, evaluate the two possible connections between source S and load L, namely, SABL and SBAL. Find the voltage gain for each both as a ratio and in decibels. Which amplifier arrangement is best
In the presentation, "IT and Smart Grid" the presenter, Dr. Peter Will, provided several definitions of "smart-grid". Provide your definition of smart-grid the way you understand it. What are some of the benefits of "smart grid" application
Assume that capacitor is completely discharged when t
A Sequential circuit has two inputs x and y and two outputs two and three. The output two is 1 if the total number of 1 inputs on x and y is a multiple of 2 (including 0 ). The Output three should be 1 if the total number
Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.
A 6th order Chebyshev low pass filter has a 0.5dB ripple in the pass-band and has a cutoff frequency of 5Khz, determine the attenuation (dB) of the signal at: 1. 4Khz 2. 40Khz 3. 40Mhz
A dielectric sphere has radius r = 2 and the material inside the sphere has dielectric constant er2 = 4. THe region outside the sphere where r > 2 is free space and the electric field there is E1=(16r+2+8\phi). Find electric field E2 inside the sp..
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