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If 1000J of energy is required to move 9x10^19 electrons through alamp having a resistance of 25Ω. Find the current through the lamp and the voltage
an office with several work stations has an effective area of 527 sqft (49 meters). it has decorative incandescent lighting. The lamps are 40 watt yielding an out put of 18 lm/W. An illumination of 645 lux is required for the work stations.
A DSSS-CDMA signal has a chip sequence that is 10,000 chips in length. The sequence repeats every millisecond. What is the chip rate?
A 40 H resistor, a 5 mH inductor, and a 1.25/xF capacitor are connected in series. The series-connected elements are energized by a sinusoidal voltage source whose voltage is 600 cos (8000t + 20°)V. a) Draw the frequency-domain equivalent circuit.
Evaluate the TL parameters. Include the effect of the earth as ideal. Do not incorporate the effect of the shield wires.
Design a logic circuit to produce a high output only if the input, represented by a 4-bit binary number, is greater than twelve or less than three. Implement a minimized circuit using only NAND gates.
1.Explain aluminum migration in device contacts, and propose possible solutions for the aluminum spikes caused by the migration. 2.What are the two methods for the first step of impurity doping Why a second drive-in step is needed
Design (determine) the metallurgical channel thickness of an n-channel silicon JFET such that the pinch off voltage is -3.0V. The doping parameters are NA=3x1018cm-3 and Nd=2x101616 cm-3.
If you have an M/M/Infinity system with arrival rate lambda and service rate mu(µ), how would you show that the expected number of packets in the queue is equal
H(s) = ( 100 (s + 20) (s + 50) ) divided by ( ( s +8 ) ( s + 300 ) ( s + 5000 ) ) Determine the Bode magnitude and phase responses forH(s). Label all slopes and dB values.
(a) Draw a circuit diagram and (b) calculate the total energy stored in the two capacitors. (c) What potential difference would be required across the same two capacitors connected in parallel for the combination to store the same amount of energy..
At what tempurature will intrinsic silicon become a conductor based on the definition resistivity
A semiconductor device requires n-type material; it is to beoperated at 400K. Would Si doped with 1015atoms/cm3 of arsenic be useful in this application Could Ge doped with 1015cm-3 antimony beused
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