Find out built-in potential barrier and widths of depletion

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Reference no: EM13265299

A junction is an n region next to an intrinsic region, which can be represented as an ntype region to a p-type lightly doped region. At T= 300K, the doping concentrations in silicon are Nd =1018 cm-3 and Na= 1013 cm-3. Find out built-in potential barrier, the widths of depletion region extending into n-type and p-type regions, total space charge width and the magnitude of peak electric field for zero applied bias.

Reference no: EM13265299

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