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1. If an odd-ordered active high-pass filter is to be implemented then we need a first a simple firstorder RC circuit and a buffer. Give this RC circuit along with the buffer
2. Find an active RC high-pass filter with a 3 dB cut-off rerquency of 2π(200). At the edge of the stop band at 2 π (60), the attenuation must be at least 20 dB.
The Power Consumption of a single-phase electric load fed from a 120 V source is represented by: P(t) = 100(1- e -t/10 ) KW where t is the unit of time in hours. Compute the energy consumed by the load over the period of 24 hours.
Explain the differences amonga truth table, a state table, a characteristic table, and an excitation table. Also, explain the differences among a Booleanequation, a state equation, a characteristic equation, and a flip-flop input equation.
Consider a 1-D semiconductor system when we have a perfect balence of drift and diffusion of holes. that is the total Jp=Jp, diffusion +Jp, drift = 0. P(x=x1)=p1, P(x=x2)=p2. find the potential drop from x2 to x1 in terms of p1 and p2
EE-362 Electromechanical Energy Conversion - Find expressions for the coenergy and What is the field current - What is the base impedance?
C++ Program Help, make a program that will read a file from a disk and will take the first letter of each word and and make that into a sentence.
Assume the mixer is at a physical temperature T0.
use an ideal op amp to design an inverting integrator with an input ressistanceof 10 kilo ohm and an integration time constant of 10^-3. What is the gain magnitude and phase angle of this circuit at 10rad/sand 1rad/s.
Design a circuit which provides 20 dB of gain. The 3dB filter points should be 50 HZ and 50 KHZ. Use a bipolar power supply (+/- 9V). Your circuit should be able to provide a minimum of 5 Watts of output power.
Two 100 kg football players wearing regulation helmets collide helmet to helmet while each is moving directly at each other at 10.0 m/s and come to a near instantaneous ( 2 , and the helmets are each designed to provide a crumple zone of 0.025 m. ..
Question 3 Consider a silicon pn junction diode at room temperature with: EG = 1.1 eV VBI = 950 meV
1. The stress at a point has σx = 13 ksi (T), σy = 18 ksi (T) and τxy = +6 ksi. (3 pts) Determine the principal stresses for the plane stress problem.Calculate the maximum shear stress. Show the results on the diagram below.
Compute y(nT) iteratively for n=0, 1, 2, when, y(-T)=2, and x(nT) = u(n) Hint: the initial conditions are given for negative n. Shift the equation to the right to express x() and y() to eliminate all advances and end up with x(n), y(n)
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