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Let the random variable X denote the annual snow fall amount at a well known Utah ski resort. X has a normal distribution with mean 500 inches and standard deviation 50 inches.
(a) What is the probability that in a given year the snow fall will be between 432 and 568 inches?
(b) Find a value d such that X is in the range 500 d with probability 0.999.
(c) What is the probability that at least 8 out of 10 consecutive years will have annual snowfall amount greater than 522 inches?
Digital Communications, Order the following modulation types in terms of spectral efficiency (best to worse) and explain
Need to use multisim and proteus and have build the circuit diagram on multisim and proteus, also have the program written, all u need to do its simulate it and take the necessary results.
Important information about Frequency Divider, Design a frequency divider circuit that will output three pulse frequencies: 25 kHz, 10kHz, and 2.5kHz. Assume that only a 150 kHz CMOS compatible signal is available for the divider input
draw a digital design consisting of 2 input AND gates and three inverters, where an inverter is connected to each of the AND gates input and its output. For each of the four possible combinations inputs applied to the two primary inputs.
A sensor with a nominal resistance of 50 ? is used in a bridge with R1 = R2 = 100 ?, V = 10.0 V, and R3 = 100 potentiometer. It is necessary to resolve 0.1 changes of the sensor resistance. A) At what value of R3 will the bridge null
very useful not only in obtaining the rectangular and polar forms of complex numbers
Determine the standing wave pattern for the voltage in the line. Express the result in real insantaneous form and simplify
Determine the energy uses on farms in middle east and determine whether or not it is better to use a stand alone system or a grid connected system for the application on farms.
A ripple carry adder is made of full adder cells each having 1 unit of combinational delay. To convert a four-bit ripple carry adder into a four stage pipeline adder proceed as following.
In comparing the behaviour of an n-channel MOSFET with a p-channel device having identical geometry and threshold voltage, it is found that the n-channel FET has a greater drain current than that of the p-channel FET.
Boron donor atome at a concentration of 10^15 cm^-3 are distributed uniformley throughout a silicon sample. The sample is then also doped with 6*10^15 cm^-3 of phosphorous. calculate the position of the Fermi level
The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input signals from a source impedance of 1 kW and provide an undistorted output amplitude of 5 V when driving a 560..
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