Estimate the worst charge-sharing noise as a fraction of vdd

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Reference no: EM131276138

Repeat Exercise 9.31 if a small secondary precharge transistor is added on one of the internal nodes.

Exercise 9.31

Design a 4-input footed dynamic NAND gate driving an electrical effort of 1. Estimate the worst charge-sharing noise as a fraction of VDD assuming that diffusion capacitance on uncontacted nodes is about half of gate capacitance and on contacted nodes it equals gate capacitance.

Reference no: EM131276138

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