Reference no: EM132749232

Note, could you please provide more explanation with your answers. Thank you

A p-n junction diode is to be used as a light exposure sensor in a digital camera.

i. Draw a graph of current vs voltage for the sensor (known as the I-V characteristic), and state an appropriate equation that describes the operation of the device.

ii. Draw a second I-V characteristic curve on the graph to illustrate how it changes when the device is subject to incident light.

iii. Why such devices are operated under reverse bias conditions, as opposed to using forward bias, when the light intensity is to be accurately measured.

iv. What a challenge involved in fabricating a scaled-down version of the device for use as a part of the pixelated image sensor array, and what the practical limiting factor on operating such a scaled-down device.