An implanted profile is formed by two boron implantations. The first one uses energy of 100 k_{eV} and the second one, an energy of 200 k_{eV}. The peak concentration of each distribution is 5 x 1018 /cm^{3}.

Draw a graph of the composite profile and find the junction depth(s) if the phosphorus background concentration is 10 1 6 /cm^{3}. What are the doses of the two implant steps?

What is meant by remoteness of damage : What needs to be established by a plaintiff in order to succeed in an action against an occupier for injuries received on the premises of the occupier? In the tort of negligence, how is it ascertained whether a breach of duty has occurred? In the tor.. |

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Examine the spectra of the modulated signals : Develop the demodulation circuit corresponding to Illustration 154. Rectification should be shown by the „absolute value" process (module "arithmetics"), the RC circuit by lowpass filtering. See also Illustration 155 |

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Draw a graph of composite profile and find junction depth : Draw a graph of the composite profile and find the junction depth(s) if the phosphorus background concentration is 10 1 6 /cm3. |

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## Determine the reverse saturation current isA particular diode was measured to have VD = 0.62 V at ID = 5.895 mA. Determine the following: a) the reverse saturation current IS. b) VD for a forward current of 100 mA. Assume VT = 25 mV. |

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## List the content of all the memory locations in the promImplement a high-speed multiplier which will multiply two 2-bit binary numbers (B1B0 and C1C0) using a 16X4 PROM (lookup table implementation). List the content of all the memory locations in the PROM and describe the operation. |

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