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1. Determine the smallest allowable physical distance between the centers of co-channel cells if N = 4 reuse is used, and each cell has a radius of 2 km.
2. Derive the Erlang B expression given.
For the series magnetic circuit of given figure, determine the current I necessary to establish the indicated flux.
Computer analysis of the circuit shown in the Figure indicates that the values of the node voltages are v1=20 angle (-90 deg) and V2=44.7 angle (-63.4deg). Are these values correct? Calculate the current in each element using the values of V1 and V..
g. What happened to all the power delivered to the resistors h. If the resistors are available with wattage ratings of 1/2 W, 1 W, 2 W, and 5 W, what minimum wattage rating can be used for each resistor
Find out the birthday (month and day but not year) of a randomly chosen person. What is the sample space of the experiment. How many outcomes are in the event that the person is born in July
Water is flowing through a 0.1 m diameter pipe at a velocity of 2.5 m/s. what diameter pipe will it need to transition into to decelerate to 0.5 m/s
Determine the Fourier series coefficients for the following discrete-time periodic signal. Plot the magnitude and phasefor each set of coefficients ak x[n] = sin(2πn/3)*cos(πn/2)
What is the voltage gain of an emitter follower? This being the case, in what applications would such a circuit be useful?
what is the force to the nearest tenth of a mN on a charge q=0.71micro coulums at the point p a distance of r=0.22 meters and what is the magnitude of the electric field to the nearest tenth of a N/C
If the speed of the crate at A is 15 ft/s which is increasing at a rate v=3 ft/s^2, determine the magnitude of the acceleration of the crate at this instant. [crate is on an incline sliding back toward the orgin at a distance of 10ft
An AM receiver, operating with a sinusoidal modulating signal and 80 percent modulation, has an output signal-to-noise ratio of 30 dB. a) What is the correspoding carrier- to - noise ratio
For looping, another field in the ROM can be used to specify a jump to a different next address.
The enhancement-load transistor in the NMOS inverter in given Figure has a separate bias applied to the gate. - determine VO H and VO L.
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