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show that the resistivity of intrinsic Ge at 300k is 44.44 ohm-cm. If donor impurity is added to an extent of 1 atom per 10^8 Ge atoms, prove that the resistivity of the Ge sample drops to 4.42 ohm-cm (at 300k). Assume that the electron mobility is 3800 cm^2/v*s, and the hole mobility is 1800 cm^2/v*s; ni=2.5x10^13 electrons per cm^3; and, number of G2 atoms per cm^3=4.41x10^22.
Do you think that an electric automobile based on capacitive energy storage is feasible?
A balanced Y-connected load of 100 + j50 Ohm is connected to a balanced three-phase source. If the line current is 42 A and the source supplies 12kw, determine (a) the line voltage; (b) the phase voltage.
if we have a circuit with R= 5, L=22mH, C=22nF , Vs=10 and the switch S was opens for a long time and it closes at time t=0 second. all connected in series, how can i find the voltage in the capacitor Vc
Interpret manufacturer's data sheet to select appropriate combinational logic devices for specific purposes
Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.
Design a load resistor (resistance rating and power rating) network to have the transformer operate at full load. Design a second network for half load. You may need to combine several resistors to get the desired value.
A signal contains a mixture 30 , 100 and 240 Hz Sine waves and also contains wideband noise whose spectrum is from 500 Hz up to a 1000 Hz. Describe a filtering technique that can be used to cleanly separate 30, 100 and 240 Hz from each other and a..
Silicon has an absorption co-efficient of 850 cm-1 at a wavelength of 805 nm. Light of intensity 1 W/m2 at this wavelength is directed at normal incidence onto a polished silicon wafer of thickness 0.5 mm.a. Assuming a top surface reflectance of 30..
Discuss briefly the implications of these values of T1 for ultrasonic imaging. Repeat the calculations above with the angle of incidence of the ultrasound beam now being 60 degrees.
SR flip flop from D Flip flops, Show how to build a rising edge triggered SR flip-flop using a rising edge triggered D flip-flop and combinational logic.
A sequential circuit has two JK flip-flops and , one input , and one output . The flip-flop input equations and circuit output equation are: Ja=Bx Ka=x' jb=A'x Kb=A+Bx; Y =Ax'+Bx'
Within a region with volume 2.1 m^3, J=xhat*3.2*x A/m^2. What is the rate of change of total charge within the volume (in C/s)
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