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Define the operator Dh (where h > 0 ) byDh f(x)= [f(x+h) - f(x)]/hSuppose f has three continues bounded derivatives and letEh f(x) be an approximation to f'(x) whereEh F = 2 Dh f - D2h fa) what is the order of this approximation?b) Suppose |f(x) - g(x)| < = for all x show that anappropriate of h lead to |f'(x)- Eh g(x)| <O = (μ) where μ>0 is as large as possible what is μ?
A field technician measures the signal level at the output of a cable amplifier as 42.5 dBm, and measures the input to the same amplifier as 24.8 dBm. What is the gain of the amplifier
A new government law requires that the lead content of drinking water be less than 1.0 ppb. You are a safety engineer, and you have recently tested your companys drinking water using two methods. Method A gives a reading of 0.85 ppb
A silicon semiconductor resistor is in the shape of a rectangular bar with a cross sectional area of 1x10-6 cm2 a length of 0.1 cm and is doped with a donor concentration of 5x1016 cm-3. (a) Calculate the resistance of this resistor at 300K.
What is the maximum value of N0 for an FM cell phone whereby ST=
a piston cylinder device initially contains steam at 3.5 MPa, superheated by 5 C. steam loses heat to the surrounding and the piston moves down hitting a set of stops at which point the cylinder contains saturated liquid water.
The distribution line connecting the source to the load has negligible impedance. Load 1 is purely resistive and absorbs 60 kW. Find the per-phase impedance of load 2 if the line voltage is 415.69V(rms) and the impedance components are in series.
A wafer 100mm in diameter is mounted in an electron-beam evaporation system in which spherical radius is 40cm. Estimate the worst case variation in film thickness between the center and edges of the wafer for an evaporated aluminium 1micro meter t..
Graded-index separate confinement double heterostructure (GRIN-SCH) InGaAs/GaAs lasers with various cavity lengths were tested in the lab. The 100m wide oxide strip lasers consists of two pairs of 10nm In0.2Ga0.8As quantum-well (QW).
1) in a swamped common-emiter BJT amplifier, as shown below, if Vcc =12 V, R1 =8.2 kohm, R2=10 kohm, Rc = 500 ohm, Re= 1 kohm, Vbe = 0.7 V, and B =100, what is the transistor`s emitter current
The goal is to design and implement a high-speed logical shifter. The specification you have been given requires the design of a circuit that will shift a 16-bit word to the right or to the left by 1-,2-,3-, or 4-bit positions in a single clock ti..
Phosphorous is an n-type dopant in Si since it introduces extra electrons to Si (an P atom has 1 more valence electron than Si). It is widely used in making semiconductor devices (p-n junctions for example).
What happens to the propagation delay of the N-bit full adder as N is increases from 2 bits to 32 bits Compare and contrast this method of building an adder with the carry look ahead method described in your textbook
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