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-A silicon diode has a doping profile such that ND = ax3. What is the depth of the junction assuming the p side is uniformly doped with NA per cubic cm. Assume the x origin is at an ideal ohmic contact on the n side of the diode.(assume T=300K).
-Sketch the energy band diagram for a Si p/n+ diode doped with NA acceptor and ND donor atoms. Assume both sides are non-degenerate.
-For the diode in problem 1b, if NA = 1015 and ND =1016 what is the built in potential (numeric value) of the diode?
-What is the origin of avalanche breakdown in a diode?
A unity feedback control systems for a robot submarine has a plant with a third-order transfer function G(s) = K / (s(s + 10)(s +50)) We want the overshoot to be approximately 7.5% for a step input
For the depletion-load amplifier, let W1=80microm, L1=4micrometers, W2=8 micrometers and L2=32 micrometers. If the body-effect parameter X=0.2, find the voltage gain neglecting the effect on ro.
A current amplifier with R=9 kohm Ro=1 kohm and Ais=100 is connected between a 8 V voltage source with a source resistance of Rs=1 Kohm and a load resistance of RL=9 Kohm.
Let x(t) = u(t) u(t 1).Find the average signal y(t) using the above integral. Let T = 1. Carefully plot y(t).Verify your result by graphically computing the convolution of x(t) and the impulse response h(t) of the averager.
Ten multimode glass fibers (n1 = 1.48, n2 = 1.45) are spliced together. Each fiber is 2 km long and has a loss rate 2-dB/km. Each splice adds 1 dB of loss. If the output power of the source is 7 dBm and radiates uniformly in a 60 degree half cone
What kind of transistor has higher voltage gain, BJT or FET and why What kind of transistor has better noise response BJT or FET and why How about frequency response high frequency, FET or BJT Low frequency response, FET or BJT
A 240kW 500 Volt 1750rpm separately excited dc generator has an overall efficiency of 94%. The shunt field resistance is 60ohms, and the rated current is 5amps. The I^2R loss in the armature is 0.023pu.
A boost converter has 5 V input and 12 V output at 60 W. The diode is ideal. The transistor requires 1 us to turn on and off. The switching frequency is 100 kHz. The storage components are large.
The transmission line has an impedance of 600 ohms and is terminated in a load of 600 ohms. The transmitter delivers an average power of 0.1 W to the input of the line.
An electric field E = 10z(hat) V/m exists in air (for which epsilon_r = 1) in the region defined by the equation z > 0. A dielectric medium with epsilon_r = 5 exists in the region defined by the equation z
Design a static CMOS inverter with long channel transistors and a. switching voltage VM of 0.6 VDD. What is the resulting ratio of WP/WN b. switching voltage VM of 0.45 VDD. What is the resulting ratio of WP/WN
Determine the ROM size and contents to implement a function which converts a sign and magnitude number from -5 to +6 to two's complement format.
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