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Electrons and holes are moving in a uniform, onedimensional electric field E = +2500 V/cm. The electrons and holes have mobilities of 700 and 250 cm2/V · s, respectively. What are the electron and hole velocities? If n =1017/cm3 and p =103/cm3, what are the electron and hole current densities?
our senior design team is designing a force sensor to measure a force signal and analyze the signal with a microcomputer (binary system). The analog force signal is between 10 N and 70 N and has the frequency bandwidth of DC - 1000 Hz.
Define Design with Multiplexer, Design a circuit using one 16 TO 1 multiplexer with W, X,Y,Z on the control inputs
send the pattern 0x99 to Memory Location VAR2 and call the delay function one more time. Repeat this operation eight times using a for loop. Assume that the bus clock frequency is 24MHz. Write the delay using inline assembly language.
A particular intrinsic semiconductor has a resistivity of 50 -cm at T=300 K and 5 - cm at T=330 K. Neglecting the change in mobility and effective density of states with temperature, determine the bandgap energy of the semiconductor.
For the circuit of Figure the following parameters are given with Vcc = 18 volts DC: Rs = 0 ohm r pi = 1000 ohm Rb = 1750 ohms C1 = 10 microfarads gm = 50mS RL = 100 ohms Ce = 0.1 microfarads Re = 135 ohms C2 may be considered very large
an automobile travels 1200ft in 30s while being accelerated at a constant rate of 1.8 ft/s^2. Determine (a) its initial velocity, (b) its final velocity, (c) the distance traveled during the first 10s
Two charges are held fixed in an x-y plane. Charge Q=-1*10^-9 C is located at the origin, q=3*10^-9 C is located at (0,2). Determine the voltage (v_ba) between point 'b' located at (3,0) and point 'a' located at (1,0).
Design an amplifier circuit which uses an OpAmp and is powered by dual 15 V power supplies, and which has the following characteristic at low frequencies: Vout = 3V1 - 5V2 1. State the information which is extracted from the equation.
The practical voltage source is formed by combining an ideal voltage source (Vs) and internal resistance (r). 1) Without computing, determine sign of power Ps delivered by voltage source
Find the density for germanium (Ge) semiconductor atoms give that its lattice constant a-5.66Å (Angstrom) and atomic weight is 72.59 g/mole.
1) What is the difference between a continuous spectrum and a line spectrum 2) What is the fundamental difference between a continuous signal and a discrete signal 3) Why are linear time invariant (LTI) systems so important in engineering and enginee..
A full adder is a circuit which adds three bits X, Y, Z together and returns two bits C and S to represent the total as a 2-bit binary number C S. C is the MSB and S is the LSB. For example, if X=1, Y=1, Z=0, the total should be 2, or 102 in binar..
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