Determine thermal equilibrium concentration of free electron

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A silicon semiconductor at T=300K is homogeneously doped with Nd=5e15 cm^-3 and Na=0. a) determine the thermal equilibrium concentration of free electrons and free holes. B) calculate the drift current density for an applied electric field of E=30 V/cm. c) repeat parts a and b for Nd=0 and Na=5e16 cm^-3.

Reference no: EM13286003

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