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Consider the three-input NOR logic gate in Figure. The transistor parameters are VTNL = -1 V and VTND = 0.5 V. The maximum value of vO in its low state is to be 0.1 V.
(a) Determine K D/KL .
(b) The maximum power dissipation in the NOR logic gate is to be 0.1 mW. Determine the width-to-length ratios of the transistors.
(c) Determine vO when vX = vY = vZ = 3 V.
A diode is fabricated with Na>>Nd. What value of doping isrequired on the lightly doped side to achieve a reverse-break down of 1000V if the semiconductor material breaks down at a field of300kV/cm
Problem: A load has 10 A current at a lagging power factor of 50%. Voltage is 120 V, and frequency is 60Hz. What size capacitor must be used to bring power factor to 90%?
Given the sum of products: F = (A'BFG) + (AB'CD) + (BD'FG) + (ACDE') Create an all NAND gate realization of the circuit. Use boolean manipulation to arrive at the minimum number of chips needed. Then repeat only this time using all NOR gates.
1) Plot the impedance with respect fo frequency from 1Hz to 10MHz 2) Capacitor must be less than .1 of a 480 ohm resistor to be a good bypass capacitor for that resistor. What range of frequencies can we use this capacitor for
Draw the developed diagram and show the positions of brushes.
Given a function f(x, y, z) as the distance between a point P(x, y, z) and the origin O(0, 0, 0).
rc circuitsnbsp1 hand calculate the expression for the voltage and current of the capacitor and plot these equations by
what is the largest binary number that can be expressed with 14 bits what are equivalent decimal and hexadecimal numbers
Which of Herrmann's four quadrants is best suited for engineering? Are there any dominant modes of thinking that are not ideal for engineering? Explain your answers.
The total complex power delivered to the Y-connected 3-phase balanced load is 1152+j864 KVA. The line voltage at the terminal ofthe load is 4160V. a) Find the magnitude of the line current feeding the load.
Assuming the bandgap of GaAs, Eg1 = 1.424 eV and that of AiAs, Eg2 = 2.671 eV, find the required AI - fraction x in AIxGa1As compound to fabricate the material for red light emission with the wavelength lambda = 652 nm.
neutralise the armature reaction flux(c) neutralise both the armature reaction flux as well as commutating e.m.f. induced in thecoilD.C. generator generally preferred for charging automobile batteries is(a) series generator(b) shunt generator
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