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A point charge Q is located at (0,0,d) above an infiniteconducting plane that lies in the xy-plane and is maintained atground potential. Find a) the surface charge density as a function of x and y on the conducting plane and b) the total charge inducedon the conducting plane.
Let the random process X(t) be defined as X(t) = A + Bt, where A and B are independent random variables each uniformly distributed in [-1, 1]. a) Find the mean of X(t). b) Find Rx(t1, t2) c) Is X(t) wide-sense stationary
A first order allpass filter impulse is given by h(t)=-δ(t)+2e-tu(t) (a) Find the zero-state response of this filter for the input etu(t). (b) Sketch the input and the corresponding zero-state response.
A 5-element uniform linear array with inter-element spacing of λ/2 is to have maximum radiation in the direction θ=60° , find the current phases , find the directions of null radiation , hence sketch the radiation pattern
Design and sketch a current source that delivers 1uA to a load. The sum of all resistors used should be
Calculate the Fourier Transform of f(t) = 5 sinc(-2t/100), and graph the magnitude and phase as a function of f. If the signal of problem 1 is delayed by 0.1 ms. What is the new Fourier Transform.
stochastic message signal, m(t), is transmitted down a (noiseless) cable channel by PCM, using an 8-bit code. If the ambient signal is equally likely to lie anywhere between its two extremes, (+/- mp), calculate the ration of the mean squared sign..
Two random variables X and Y have a joint probability density function given by f(x,y) =kxy 0
A 5.88-g bullet is moving horizontally with a velocity of +340 m/s, where the sign + indicates that it is moving to the right (see part a of the drawing). The bullet is approaching two blocks resting on a horizontal frictionless surface.
Write the logic equation for Y in terms of A,B,C that solves this problem, and draw the gate-level diagram.
Calculate the inductive reactance per meter of a single-phase, 50-Hz, two-wire transmission line. Assume each conductor's radius is 9cm and the distance between the two conductors is 5m.
Design (determine) the metallurgical channel thickness of an n-channel silicon JFET such that the pinch off voltage is -3.0V. The doping parameters are NA=3x1018cm-3 and Nd=2x101616 cm-3.
Assume that a given transformer is 100% efficient; that is, the power being supplied by the primary side is transported without loss to the secondary side. (Transformers are not 100% efficient. One can detect this by the heat that they radiate.)
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