Determine the required doping concentration in anode region

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Reference no: EM13248049

The built-in voltage of a GaAs pn junction diode is 1.25 V when the diode's temperature is T = 320 K. The cathode region of the diode is doped with phosphorus at a concentration of 1017 cm-3. Determine the required doping concentration in the anode region.

Reference no: EM13248049

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