Determine the impurity doping concentrations in each region

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Reference no: EM13277206

A silicon abrupt junction in thermal equilibrium at T= 300k is doped such that Ec-Ef = 0.21eV in the n region and Ef - Ev = 0.18eV in the p region. Determine the impurity doping concentrations in each region.

Reference no: EM13277206

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