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For the circuit following parameters are given with Vcc = 18 volts DC:
Rs = 0 ohm r pi = 1000 ohm Rb = 1750 ohms
C1 = 10 microfarads gm = 50mS RL = 100 ohms
Ce = 0.1 microfarads Re = 135 ohms C2 may be considered very large
vs is a sinusoidal voltage source of 1 volt amplitude and variable frequency. You may assume that the numerical values of the small signal parameter gm may used in large signal quiescent calculations
Determine the gain of the output from vs to vo at a frequency of 100kHz in dB
Determine the phase shift of the circuit from vs to vo at a frequency of 100 kHz
Determine the average power dissipated in Re in watts at 10 kHz
Determine the average power dissipated in RL in milliwatts at 50 kHz
A pipe of inner radius 4 cm, outer radius 6 cm, and infinate length is centered on the z-axis. Charge is evenly distributed within the wall of the pipe in the amount of 16 coulombs per meter length.Find and Plot the electric feild density as a fun..
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Whether reading consecutive 20 bits from the same wordline would consume about 20 times more energy than reading 1 bit from this wordline. What is the total storage capacity of this DRAM array
very useful not only in obtaining the rectangular and polar forms of complex numbers
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Consider a three-phase distribution feeder with line reactance of10 ohm supplying a three-phase Y-connected load of 200 kVA at power factor of 0.85 lagging.
a) If the internal resistance of a voltmeter is 100x bigger than the output impedance of a circuit, what is the loading error b) If the internal resistance of an ammeter is 10x smaller than the output impedance of a circuit
A ball is thrown upwards with a velocity of 31 m/s at an angle of 35.5 to the horizontal from a point which is 8 m above ground level. Find: 1) The greatest height reached, above the point of projection
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The 24-bit data field of a packet is given by 0xBC603F. The packet contains a CRC with the generator polynomial given by X 3+X+1 a) Find the CRC checksum. Provide the complete code-word including the checksum in hex.
A semiconductor, in thermal equilibrium, has a hole concentration of p0 = 2x1016 cm-3. The minority carrier life time = 3x10-7 s. (Assume, ni = 1010 cm-3)
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