Determine standby cell current and total memory power

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Consider the NMOS RAM cell with resistor load in Figure (b).

Assume parameters values of  = 80μA/V2, VT N = 0.4 V, VDD = 2.5 V, and R = 1 M Ω.

(a) Design the width-to-length ratio of the driver transistor such that VDS = 20 mV for the on transistor.

(b) Consider a 16-K memory with the cell described in part (a).

Determine the standby cell current and the total memory power dissipation for a standby voltage of VDD = 1.2 V.

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Reference no: EM131232150

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