Determine p-type and n-type substrate doping concentrations

Reference no: EM131209651

A complementary pair of ideal n-channel and p-channel MOSFETs are to be designed to produce the same I-V characteristics when they are equivalently biased. The devices are to have the same oxide thickness of 250 Å and the sane channel length of L = 2 µm. Assume the SiO2 layer is ideal. The n-channel device is to have a channel width of w = 20 µm Assume constant inversion layer motilities of µn = 600 cm²/V-s and µp = 200 cm²/V-s

(a) Determine P-type and n-type substrate doping concentrations.

(b) What are the threshold voltages?

(c ) What is the width of the p-channel device?

Reference no: EM131209651

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