Design the width to length ratios of the transistors

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A 16-K NMOS RAM, with the cell design shown in Figure (b), is to dissipate no more than 200 mW in standby when biased at V_DD = 2.5 V. Design the width-to-length ratios of the transistors and the resistance value. Assume V_{T N}= 0.7 V and = 35 μA/V².

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Reference no: EM131232155

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