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Design an n-channel silicon jfet with pinch off voltage

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Reference no: EM13279487

design an n-channel silicon JFET with pinch off voltage (-2V). The channel is doped with Arsenic and the gate is doped with Boron. the Boron density is 1019 atoms /cm-3 all atoms are fully ionized. The resistance of the channel at zero gate bias is equal to 0.15 Ω.

assume one-sided junction model and assume an ideal JFET( Rs=0,RD=0, full depletion, Long channel) for the derivation parameters.

a)determine channel thickness, width, length, doping densities, the carrier mobility, built-in-potential, and turn off voltage (VT), by knowing the design obtained must be reasonable and feasiable for JFET fabrication.

b) calculate IDsat and VDsat for VG (v) at 0,-0.5,-1.5,-2.0, and at VT

c)calculate trans-conductance in saturation region for values of VG =0,-0.5,-1.5,-2.0, and VT

d) Graph current ID as function of VD using matlab ( sweeping VD from 0 to VDsat ) for values of VG 's and VT.

Reference no: EM13279487

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