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Assume CMOS inverter propogation delay is 100 pico seconds. Design a one input/ one output pulse generating circuit which will generate 600 pico seconds wide pulse at the output each time the input changes from one logic to another.
a) show the truth table b) show an algebraic expression in sum of minterms fom. c) show a minimum sum of products expression d) show the minterms of the complement of each function in numeric form.
If a frame is damaged then in this network the receiver sends back a request for retransmission. (For simplicity, assume all these requests arrive back perfectly at the sender). What is the mean number of transmissions required to successfully tra..
Explain the term 'multiplexing' in general and describe why it is particularly important in the transmission of PAM signals and describe the main factors upon which the maximum data rate over a channel depends.
A dc series motor has a armature current of 10A at full load. The motor terminal voltage is 300V. The armature and field resistances are 2 ohm and 3 ohm respecitively. The motor speed at full load is 250 rpm. Calculate the starting torque of the m..
an amplifier with a 1 MHz bandwidth and a 20 micro-V input signal. The input noise = 1 micro-V, output signal = 6.0 mV, and output noise = 1 mV. Find (a) SNR at the input Pin = Pn(in)= K(T)BW= 1.38*10-23(290)1MHz= 4*10-15W
An unknown semiconductor has a bandgap of 1.1eV and Nc = Nv. It is doped with 10^15 cm-3 donors where the donors fully ionized. Given that EF is 0.25 eV below Ec, calculate the concentration of electrons and holes in the semiconductor at 300 K and..
If the data stream is transmitted using a bandwidth of 64 kHz in an ordinary system (without spread spectrum), what is the SNR that could be tolerated without experiencing significant errors
antimony pentafluoride,SbF5, is very strong lewis acid and can be used in combination with HF to form a superacid solution. predict the molecular geometry of SbF5 and draw its lewis structure.
If there is two AC currents in a circuit and both have different angular velocity, is there a way to analyze the circuit by finding an equivalent angular velocity between the two currents and superposition can't be used
Determine the transconductance in the saturation region for the n-channel MOSFET using the following paramters at room temperature.1. p type Si density = 2.8*10^15 /cm^3 2. Si intrinsic carrier concentration = 8.6*10^9 /cm^3 3. Metal-semiconductor ..
Calculate current flow and describe its probable path. Will the breaker likely be tripped? Is there a risk of electrocution? If so what factors contribute to the risk?
Find the values of I and V for the circuits assuming diode are ideal. Consider Vin=0,2,6, and 10V. Also plot V vs. Vin for Vin ranging from -10V to +10V
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