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Design a decade counter (negative edge-triggered counter) using flip flop circuit that can be used to perform binary counting. Show the timing diagram for the input and four outputs of the decade counter. Note that the counter output cycles back to 0000 after 1001. Cascade four counters in order to counts in power of 10. Use seven-segment LED display to view the output (driven by decoder).
Each pole of a 100kW, 250v flet-compound generator has a shunt field of 2000 turns and a series field of 7 turns. If the total shunt field resistance is 100 ohms
Assuming no feedback to the adversary until each attempt has been completed, what is the expected time to discover the correct password?
How is the problem-solving process different when programming in assembly language versus programming in ladder logic?
Analysing spectrum anlyser output, A spectrum analyzer is connected to an unknown signal. The spectrum analyzer displays the power level of signals in dBm vertically and frequency horizontally. The spectrum of the unknown signal creates the follow..
Discuss how the angle of the incident light affected the solar cell? How could solar cell designs and/or installations be designed to counter this affect?
Determine ideal impulse response using inverse discrete-time Fourier transform. An ideal low-pass filter is described in the frequency-domain by
Water is the working fluid in a vapor power cycle with reheat, superheat and reheat. Superheated steam enters the first turbine stage at 8 MPa, 480 C and expands to 0.7 MPa
Select an appropriate QAM signal constellation, carrier frequency, and the roll-off factor of a pulse with a raised cosine spectrum that utilizes the entire frequency band. Sketch the system block diagram and the spectrum of the transmitted signal..
Implementation of the project with the analog and digital modulation techniques
Consider a chip design using 10 mask levels. Suppose that each mask can be made with 98% yield. Determine the composite mask yield for the set of 10 masks.
an unknown semiconductor has Eg=1.1ev and Nv=Nc.it is doped with 10^15 donors,where the donor level is 0.2ev below Ec. given that Ef is 0.25ev below Ec, calculate ni and the concentration of electrons and holes in the semiconductor at 300k.
Finding appropriate source for the electrical load, Have four circuits. One takes 9Vdc, two 5Vdc, and last one takes 12Vdc. Have variable transformer for source. How do I calculate or choose the voltage needed to run all four circuits with out blo..
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