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Using the commonly available resistors, capacitors, and inductors, design a critically damped series RLC circuit (i.e., all three components are connected in series) with an undamped natural frequency of 20 krad/s.
draw out a schematic that implements a 3-bit XOR gate, but consisting of only 2-bit NAND gates. Your schematic should have from 8-10 NAND gates, but NO other logic function such as OR, AND, INV gates can be in your final design.
(a) Calculate the velocity of the holes and electrons in this material. (b) What doping level is necessary to provide a current density of 2 mA/micrometer^2 under these conditions? Assume the hole current is negligible.
How does this cost compare with the current cost of new coal figured generation at 3.5¢/kWh? Write a brief (400 words or less) argument on why Colorado should or should not shut down its coal power plants and replace them with wind farms?
Describe the functionality of the above DFSM using transition tables. Consider that the system starts always from state B. What happens if the system will start from another state - say A?
What are the respective advantages and disadvantages of the asynchronous and synchronous communication modes from a reliability perspective?
Consider a direct sequence spread spectrum (DSSS) system attempting to transfer data. The DSSS system has a data rate of 2 Kbps (2 thousand bits/sec) which is spread to 2 Mcps
Which requires more harmonics to accurately model it (triangle, square, and sawtooth) and why?
Create a cron file that will regularly perform the following backups:?
An electric heating element is connected to a 110 v circuit and a current of 3.2 A is flowing through the element. How much energy is used up during a period
n the conduction band of a semiconductor, it has a lower valley at the center of the Bril- louin zone, and six upper valleys at the zone boundary along [100]. If the effective mass for the lower valley is 0.1m0 and that for the upper valleys
Write a report on Future Generation Telecommunication Technology.
A junction employs Nd = 8x 10^17cm^-3 and Na= 2 x 10^ 17 cm^-3. The device is at 300K. (a) determine the majority and minority carrier concentrations on both sides (b) Calculate the built-in potential at (i)T=250K (ii)300K
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