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A student attempts to construct a non-inverting logarithmic amplifier as illustrated in Fig. 8.59. Describe the operation of this circuit.
he windings of a large electromagnet have an inductance of 10.0 H and a resistance of 8.00 Ohm. The electromagnet is connected to the external EMF of 230 V. After electromagnet is switched on
Design a combinational circuit that converts a 4-bit gray code to a4-bit binary number. Implement the circuit with exclusive-OR gates.
a) Find the value of the voltage source "E"that is required to provide a 10V across the 10kΩ resistor. What are the values of [V10k/E] and [V3.3k/V10k] b) Dtermine the amount of power supplied by the voltage source when E= 20V.
Why is quality a difficult term to define. how can we improve our understanding of quality?
Consider the noise level table included in page 2 and thedesign equations included in pages 3 and 4 for circular and square membranes. Consider the radiusof the circular membranes limited to values ≤500 μm and square membranes with sides ≤1000 μm
After the third time constant, what is the current in an inductor if the steady state circuit current is 10 amps
A 150-MVA 15/200-kV single-phase power transformer has a 0.018ohm resistance and a 0.075ohm reactance. The magnetizing impedance is j80 per unit. a.) Find the equivalent circuit referred to the low-voltage side of this transformer.
Build a 1Gbps link as long as possible without regeneration. Assume a transmitter power of 1mW and a receiver sensitivity of -30dBm for a BER of 10^(-9). The dispersion at 1.5 micron is 20 ps/km.nm, and the attenuation is 0.25 dB/km.
But what I wanted was an illustration for how the mathematical justification in the attachment is right by pointing out where the dE/dt effects the magnetic field.
Assume we are only interested in the baseband portionof m(t) that captures 90% of the signal's total power. What is the effective bandwidth of the new baseband signal of interest,r(t)
Calculate current flow and describe its probable path. Will the breaker likely be tripped? Is there a risk of electrocution? If so what factors contribute to the risk?
The surface concentration is fixed at N0=1.8e20/cm^2 when diffusing boron into a uniformly doped n-type substrate. The atomic diffusion constant for boron in Si at the temperature of 950 C is 3.0e-15 cm^2/s.
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