Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
In many applications binary ripple counters are found to be very slow. One possible approach to speed up counting is to use synchronous binary counters with carrylookahead. Such a counter can be designed by generating a single carry-lookahead signal for each counter stage from the output of the previous stage. Derive the design equation for a 4-bit binary counter with carry-lookahead.
Show a complete timing diagram for a 3-bit up/down counter that goes through the following sequence: 0, 1, 2, 3, 2, 1, 2, 3, 4, 5, 6, 5, 4, 3, 2, 1, 0. Indicate when the counter is in the UP mode and when it is in the DOWN mode. Assume positive..
The scattering parameters of a GaN HEMT device are given at four frequencies in Table 11.8. Use the K - ? test to determine the stability of this transistor at each frequency.
Design the combinational 3 bit gray to binary code converter for conversion angular position of a shaft into binary code. 1) Complete the truth table 2)obtain the minimal solution with a K map 3) draw the circuit diagram, labels the inputs and output..
An op-amp is connected in the noninverting amplifier configuration. A gain of 21 is achieved using resistors ofvalue 1Mohm and 50 kohms in the feedback circuit. The signal source is connected to the v+ terminal via a 100 ohm resistor.
An electric field of 3.10×105 is desired between two parallel plates, each of area 36.0 and separated by 0.620 of air.What charge must be on each plate?
3. For the circuit shown, calculate (see attachment for circuit) a. The input resistanceat the base of the transistor. b. Theinput resistance of the amplifier
Determine the voltage VE and the current IE. - Determine VBC using the fact that the approximation IC = IE is often applied to transistor networks.
An current of 100 A flowing through the wire will produce a magnetizing force at the center of the square, equal to.
Consider a Si p-n junction at room temperature. If the doping concentrations are NA=1016 cm-3 and ND=1015 cm-3, what is the depletion width also known as space charge width. Also find the maximum electric field.
An Alternator is found to have its terminal voltage on load condition more than that on no load. What is the nature of the load connected?
A bidirectional shift register is one in which the datacan be shifted either left or right. It can be implemented by usinggate logic that enables the transfer of a data bit from one stageto the next stage to the right or to the left, depending on ..
Draw the developed diagram of the winding and show the locations of brushes and the distance between them in terms of commutator segments.
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd