Derive expressions for the parameters of the equivalent

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Given the scattering parameters for an FET, derive expressions for the parameters of the equivalent circuit model of Figure 11.21, assuming a unilateral device. Use these results to find the equivalent circuit parameters for the HEMT device whose scattering parameters are given in Table 11.7, at a frequency of 2.0 GHz. Ignore S12.

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Reference no: EM131105040

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