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In a certain n-type region of a semiconductor in thermal equilibrium, there is a hole concentration with the following spatial distribution:
po(x)=103(1 9×103x)cm 3 for0 x 10 4 withxincmAssume that in this region, the electron mobility and hole mobilities are n = 500 cm2/V ·s
and p = 200 cm2/V · s, respectively.
a) Derive an expression for and sketch the hole diffusion current density in this region.
b) Derive an expression for and sketch the hole diffusion velocity in this region.c) Derive an expression for and sketch the electric field distribution in this region.d) Derive an expression for and sketch the hole drift velocity in this region.
e) Derive an expression for and sketch the electron concentration in this region.f) Derive an expression for and sketch the electron diffusion current density in this region.
g) Derive an expression for and sketch the electron diffusion velocity in this region.
Calculate: a. The rated primary and secondary currents b. The secondary voltage if it is connected at full load of 2000 kW c. The voltage regulation from no-load to full load. Voltage regulation is given by: (E(no-load)-E (full-load))/E(full-load)..
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