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Consider the NMOS circuit in Figure. The transistor parameters are (W/L)X = (W/L)Y = 12, (W/L)L = 1, and VT N = 0.4 V. Neglect the body effect.
(a) Determine vO when vX = vY = 2.9 V.
(b) What are the values of vGSX , vGSY , vDSX , and vDSY?
Write the VHDL architecture file for the Y(5) output only for a 8-to-1 demultiplexer. The inputs are D, the selects S0-S2, and the ouputs Y(0)-Y(7). the select lines are bit_vector types, the data is bit type and the outputs are bit_vector types.
Write the equation for the acceleration as a function of the position change of the platform.
Calculate the angular displacement between the rotor stacks. Determine the frequency of phase currents required to achieve a rotor speed of900r/min.
create a 512-length signal by using the rand command, then low-pass filter the signal with the filter h=1/2[1 1] to bandlimit the function, which can be represented with by the command filter.m with b1=b2=1/2, and a1=1
A transconductance amplifier with Ri = 2 kΩ, Gm = 40 mA/V , and Ro = 20kΩ is fed with a voltage source having a source resistance of 2kΩ and is loaded with a 1kΩ resistance. Find the voltage gain realized (from the source internal voltage to the o..
1-mH inductor carries a current: i(t)=50*t^2*exp(-2*t) inunit of mA. Determine the voltage, power, and energy of the inductor as a function of time.
Three single-phase transformers, each rated 15 MVA, 13.2:66 kV, with a leakage reactance of 0.1 pu, are connected to form a three-phase Y-Δ bank, one side of which is connected to a 120-kV tranmission line and the other side, to three 12-ohm resis..
The two loads draw a total average power of 52,800 W at a power factor of 0.8 leading. One of them draws 40K VA at a power factor of 0.96 lagging. What is the power factor of the other load
Express the sampled sequence, x[n], up to the fifth term.- If the signal is delayed by 0.2 s, what would now be the first five terms?
Design a two-stage switching network, using 4×4 switches, to connect 16 incoming trunks to 16 outgoing trunks, using a consistent numbering arrangement for associating the switches with the links.
In a processing plant, jars on a conveyer belt are cleaned out with a high-pressure air jet just prior to being filled (Figure Below). When a jar approaches the cleaning station, it activates a switch (with both NO and NC contacts).
Semiconductor A is direct band gap and semiconductor B is indirect gap. For providing same short circuit current density of a solar cell, which material will need more thickness
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