1. Find the built-in potential for a p-n Si junction at room temperature if the bulk resistivity of Si is 1Ωcm. Electron mobility in Si at RT is 1400 cm^{2 }V^{-1} s^{-1}; μ_{n}/μ_{p} = 3.1; n_{i};= 1.05 x 10^{13 }cm^{-3}.

2. For the p-n Si junction from the previous problem calculate the width of the space charge region for the applied voltages V = -10, 0, and +0.3 V. ∈_{si} = 11.9

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Calculate width of space charge region for applied voltages : Find the built-in potential for a p-n Si junction at room temperature if the bulk resistivity - calculate the width of the space charge region for the applied voltages |

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