Calculate the theoretical saturation current at 300k

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Reference no: EM13251103

An ideal silicon p-n junction has ND=1018 cm-3, NA=1016 cm-3, tp=tn=10-6s and a device area of 1.2´10-5 cm2.

(a) Calculate the theoretical saturation current at 300K

(b) Calculate the forward and reverse current at ±0.7V

(c) Assume the widths of the two sides of the junction are much greater than the respective minority-carrier diffusion length. Calculate the applied voltage at a forward current of 1 mA at 300K.

Reference no: EM13251103

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