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1. The electrostatic field E in a particular region can be expressed in terms of spherical coordinates. Derive an expression for the potential difference.
2. The electrostatic potential in a region is given by a function. Derive an expression for the electrostatic field in this region, and hence determine the field at the point x = 1.0m, y = 2.0m, z = 3.0m. Enter the numerical values for the components of this field in the boxes in the equation below:
3. A cube of volume L^3 is bounded by the planes x = 0 and x = L, y = 0 and y = L, and z = 0 and z = L. he charge density p(x) within the cube is given by and equation. Calculate the total charge contained within the cube.
4. The region between two concentric spheres of radi alpha and 3*alpha contains a uniform charge density p and elsewhere the charge density is zero. Calculate the radial component of the electric field a a distance 2a from the centre of the spheres, E(2a).
Choose the best answer for what a DC blocking or coupling capacitor does, assume the capacitor value is chosen to be too small. Blocks the DC and is relatively high impedance to the AC voltage. Blocks only the AC voltage going ..
Water is flowing through a 0.1 m diameter pipe at a velocity of 2.5 m/s. what diameter pipe will it need to transition into to decelerate to 0.5 m/s
A sequential circuit for a luggage lock has 10 push buttons labeled0,1,2,3,4,5,6,7,8,9. Each pushbutton 0 through 9 produces a 1on X_i, i=0 through 9 with all other values on variable X_ j, jdoes not equal i, equal to 0.
The power factor of the added load is to be adjusted so that the overall power factor of the factory is 0.96 lagging. The factory is fed from a line having an impedance of 0.02 + j0.16 O. The voltage at the factory is maintained at 480 V(rms).
The concentration of B at the surface of the Si is maintained at a constant level of 1.0 x 1025 m-3; furthermore, it is assumed that the concentration of B in the original Si material is negligible, and that at room temperature the boron atoms are..
a) Draw the state diagram b) Draw the schematic for the logic to implement this circuit using Inverters, AND gates, OR gates and D flip flops. Use the reverse side and additional sheets if needed.
Design a code to open a vault (after entering the correct 4-number sequence "1234"), it displays the word OPEN when the correct sequence is entered.
A balanced star load of 8+j6 O per phase is connected to three-phase, 230 V supply. Find the line current, power factor, power, reactive VA and total VA.
Calculate the value of vL developed across a 300 H coil when the instantaneous rate of change in component current equals 500 mA/s.
Water at the top of Niagara Falls has a temperature of 14.0°C. If it falls a distance of 60.0 m and all of its potential energy goes into heating the water, calculate the increase in temperature of the water at the bottom of the falls.
Consider a BPSK signal where each bit is represented by a triangular pulse with width T and height A. What is the "energy per bit" for this BPSK pulse with A=1V and T=0.002s
Design a two-stage switching network, using 4×4 switches, to connect 16 incoming trunks to 16 outgoing trunks, using a consistent numbering arrangement for associating the switches with the links.
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