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Using Eg s = -79.0 eV for the ground state energy of helium, cal culate the ionization energy (the energy required to remove just one electron). Hint: First calculate the ground state energy of the helium ion, He+, with a single electron orbiting the nucleus; then subtract the two energies.
Determine heat flow, Heat flow through a uniform wall will: a) increase as the thermal resistance increases b) increase as the thickness of the wall increases
Steam at 10bar and 0.95 dry flows at 130 m/sec in a pipe. It is throttled to 8 bar and the flow rate is 12 kg/sec. Assuming velocity in the pipe on the down stream side of the valve is 160 m/sec. Find the final condition of steam and the pipe diam..
The kinetic coefficients of friction between the 5-kg crates A and B and the inclined surface are 0.1 and 0.4, respectively. The coefficient of restitution between the crates is e = 0.8. If the crates are released from rest in the positions shown, wh..
a spherical balloon with a diameter of 6 m is filled with helium at 20degc and 200 kpa absolute. determine the number
an important part of a project is to identify the key process input variables kpiv and key process output variables
when the air temperature in an automobile tire is 25oc the pressure gage reads 210 kpa. if the air volume in the tire
Longitudinal versus Transverse Vibrations in a bar, A 48 inch long by 2 inch diameter round steel rod (E=30e6 psi, density=0.28 lb/in3) is fixed at one end and free at the other. If the rod is struck transversely so that there is both a longitudin..
a compressor takes in air at 100 kpa and 300 k and discharges it at 0.25 kgs at 1.2 mpa and 450 k. unfortunately the
the fatigue data for a brass alloy are given as followsstress amplitude mpa -----------------cycles to failure310
For the following pair of polymers, state whether or not it is possible to determine whether one polymer is more likely to crystallize than the other. Linear and syndiotactic polypropylene-Cross linked cis-isoprene
Design a mask set and process flow that would produce a 50000 Ohm resistor patterned onto the surface of an initially n type silicon wafer (0.18 Ohm-cm, phosphorous doped).
consider a one-dimensional plane wall with constant properties and uniform internal generation qdot. the left face is
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