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Q. Sketch g m versus v GS for a JFET with I DSS = 10 mA, V P = 3V, V A = 100 V, and v DS = 10 V. See what happens if V A →∞. Also sketch r o versus v GS .
An abrupt silicon (n i = 10 10 cm -3 ) p-n junction consists of a p-type region containing 10 16 cm -3 acceptors and an n-type region containing 5 x 10 16 cm -3 donors. a)
a mass of 20 kg is lifted u p to the roof of a cliff 100 m high.determie Ep of the mass while it is at the top
Q. Describe the construction of a two stage RC coupled amplifier with diagram. A cascaded arrangement of common-emitter transistor stages is shown above. The output Y1 of
You have been asked to help on the design of CDU's new electric vehicle. The vehicle is to be powered by a 96V, 300A battery pack and you need to decide on the maximum length you c
(a) The key elements of a protocol are the syntax, semantics and timing. Give a brief explanation of each of these key elements. (b) A file contains 4 million bytes. Compare
Both DTL and TTL are based on the saturating BJT inverter. The transistor acts as a switch that connects or disconnects the collector and emitter. The switch is closed when suffici
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Analysis of Semiconductor Devices There are two complementary techniques of studying semiconductor devices: Via numerical simulation of the semiconductor equation
MOV ( Move ) Instruction It copies the contents of the sources register into destination register. The general format is . This instruction is used to copy 8 bit from s
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