Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Explain temperature dependence of electrical resistivity and conductivity in semiconductors.
The electrical conductivity of the semiconductors changes considerably with temperature changes. At absolute zero, this behaves as an insulator. And at room temperature, due to thermal energy, several of the covalent bonds of the semiconductor break. The breaking of bonds sets those electrons free that are engaged in the formation of such bonds. It results in few free electrons. All these electrons constitute a small current if potential is applied across the semiconductor crystal. It demonstrates the conductivity for intrinsic semiconductor increases along with increase in temperature as specified by η=A exp(-Eg/2kT), here η is the carrier concentration, T is the temperature, Eg is the energy band gap and A is constant. If in extrinsic semiconductors, addition of small amount of impurities creates a large number of charge carriers. That number is so large that the conductivity of an extrinsic semiconductor is a lot of times more than an intrinsic semiconductor at the room temperature. In n-type semiconductor each donor has donated their free electrons at room temperature. The additional thermal energy only serves to raise the thermally generated carriers. It increases the minority carrier concentration. A temperature is reached while the number of covalent bonds which are broken is so large which the number of holes is almost equal to the number of electrons. After that the extrinsic semiconductor behaves as intrinsic semiconductor.
if the prime mover input of an alternater connected directly to an infinite bus in increased,then its?
how to design a 32:1 multiplexer using two 16:1 multiplexers and a 2:1 multiplexer?
power factor improvement
Q. In the non inverting summing amplifier of Figure, let R d = 1k and M = 6. Find R f so that v =
N-type semiconductor is an example of (A) Extrinsic semiconductor. (B) Intrinsic semiconductor. (C) Super conductor. (D) Insulators.
role of trigger circuit in cro
what is difference between dual trace and dual beam cro?
What do you understand by DRAM and its refreshing? Dynamic RAM (DRAM) is fundamentally the same as SRAM, but this retains data for only 2 or 4 ms on an internal capacitor. But
bias compensation using diode and thermistor
How does a diode work! what is its main formulas?
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd