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Q. (a) An ampli?er with F0 = 3 or 4.77 dB, f0 = 4 GHz, and BN = 14 MHz is used with an antenna forwhich Ta =200K. The connecting path loss is 1.45, or 1.61 dB at a physical temperature of 250 K. Find the available system noise power. compute the signal-to-noise ratio.
Charge Carriers in Semiconductors In a metal, the atoms are imbedded in a "sea" of free electrons, and these electrons can move as a group under the influence of an
Illustrate Common Emitter configuration, current amplification factor and collector amplifier. Describe transistor as an amplifier.
Temperature Triggering At high temperature the leakage current of junction J 2 increases. This leakage current is collector current of tr 1 and Tr 2 . So rise in temperat
The generator of AM EMFs consists of a battery-driven radiofrequency (RF) EMF generator connected to a 1.5 m long 50 ? coaxial cable, to the other end of which a stainless-steel sp
Q. What the voltage gains in the FET amplifier? For common source Voltage gain=V o /V i = - µRd / Rd + rd where µ is the amplification factor,Rd the drain resistance a
Q. Frequency-controlled induction-motor drives ? The converters employed for variable-frequency drives can be classified as: • Voltage-source inverter (which is the only one
The aim of this question is to help you become familiar with phasor diagrams, and in particular to see how the diagram changes when one of the system parameters (in this case resis
This example is concerned with steady-state sinusoidal analysis by using mesh equations and MATLAB. Let us consider the circuit shown in Figure and find the input impedance at the
Q. With a neat circuit diagram explain the working of a Hartley oscillator using an npn transistor and obtain the expression for oscillation frequency and for minimum gain for sust
In the circuit above, V1 is a dc supply which outputs 12V, R1 has a value of 100 Ω and C1 is 100µF. The switch has been left in the position shown for a long time such that there i
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