Calculate the approximate donor binding energy, Electrical Engineering

Calculate the approximate donor binding energy

Calculate the approximate donor binding energy for Si (r = 11.7,mxn= 1.18 m0)

Solution: From E= m*nq4 / 2(4 πε0εr)2 [h/(2 π)]2 we have

1583_Calculate the approximate donor binding energy.png

= 1.867 x 10-20 J = 0.117 eV.

Note:  The  effective  mass  used  here  is  an  average  of  the  effective  mass  in  different crystallographic directions, and is termed as the "conductivity effective mass" with values of 1.28 m0 (at 600 K), 1.18 m0 (at 300 K), 1.08 m0 (at 77 K), and 1.026 m0  (at 4.2 K).

  1. In III-V compounds, column VI impurities (e.g., S, Se, Te) that occupying column V sites act as donors. Similarly, column II impurities (e.g., Be, Zn, Cd) that occupying column III sites act as acceptors.
  2. When a column IV material (e.g., Si, Ge) is used to dope III-V compounds, then they might substitute column III elements (and act as donors), or substitute column V elements   (And act as acceptors) => amphoteric dopants.
  3. Doping  creates a  large change  in  the electrical  conductivity,  e.g.,  with a doping  of 1015/cm3 , the resistivity of Si changes from 2 x 105 Ω-cm to 5 Ω -cm.
Posted Date: 1/11/2013 4:48:30 AM | Location : United States







Related Discussions:- Calculate the approximate donor binding energy, Assignment Help, Ask Question on Calculate the approximate donor binding energy, Get Answer, Expert's Help, Calculate the approximate donor binding energy Discussions

Write discussion on Calculate the approximate donor binding energy
Your posts are moderated
Related Questions
INR (Increment )  Instruction This  instruction is used to  increment  the contents  of any  register or memory  location by one. There  are two  format.

The input to the satellite system of Figure 1 is a step function θ c (t) = 5u(t) in degrees. As a result, the satellite angle θ(t) varies sinusoidally at a frequency of 10 cycles p

Q. Give an account on the operation of the R-C coupled amplifie r. When a.c. signal is applied to the base of the first transistor, it appears in the amplified form across its c

Explain Polymers and their applications. Polymeric materials or plastics contain a large group of organo or organic metallic high molecules compound. The common properties of s

To find out the largest of ten 8 bit numbers. Method: The numbers are stored in consecutive memory locations. The counter register is initialized with 0A and the address pointer po

how to implement monostable delay in matlab simulink environment? mailtoinayath@gmail.com

What is the expected peak demand for a transformer feeding the following loads?                           Connected                 kVA

Q. With a neat circuit diagram explain the working of a Hartley oscillator using an npn transistor and obtain the expression for oscillation frequency and for minimum gain for sust

explain about signal

Explain the effect of impurity on the conductivity of a semiconductor. To form a semi-conductor conductive, a small amount of appropriate impurity is added. This is then termed