Calculate the approximate donor binding energy, Electrical Engineering

Calculate the approximate donor binding energy

Calculate the approximate donor binding energy for Si (r = 11.7,mxn= 1.18 m0)

Solution: From E= m*nq4 / 2(4 πε0εr)2 [h/(2 π)]2 we have

1583_Calculate the approximate donor binding energy.png

= 1.867 x 10-20 J = 0.117 eV.

Note:  The  effective  mass  used  here  is  an  average  of  the  effective  mass  in  different crystallographic directions, and is termed as the "conductivity effective mass" with values of 1.28 m0 (at 600 K), 1.18 m0 (at 300 K), 1.08 m0 (at 77 K), and 1.026 m0  (at 4.2 K).

  1. In III-V compounds, column VI impurities (e.g., S, Se, Te) that occupying column V sites act as donors. Similarly, column II impurities (e.g., Be, Zn, Cd) that occupying column III sites act as acceptors.
  2. When a column IV material (e.g., Si, Ge) is used to dope III-V compounds, then they might substitute column III elements (and act as donors), or substitute column V elements   (And act as acceptors) => amphoteric dopants.
  3. Doping  creates a  large change  in  the electrical  conductivity,  e.g.,  with a doping  of 1015/cm3 , the resistivity of Si changes from 2 x 105 Ω-cm to 5 Ω -cm.
Posted Date: 1/11/2013 4:48:30 AM | Location : United States







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