Calculate the approximate donor binding energy

Calculate the approximate donor binding energy for Si (r = 11.7,m^x_n= 1.18 m₀)

Solution: From E= m^*_nq⁴ / 2(4 πε₀ε_r)² [h/(2 π)]² we have

= 1.867 x 10^-20 J = 0.117 eV.

Note:  The  effective  mass  used  here  is  an  average  of  the  effective  mass  in  different crystallographic directions, and is termed as the "conductivity effective mass" with values of 1.28 m₀ (at 600 K), 1.18 m₀ (at 300 K), 1.08 m₀ (at 77 K), and 1.026 m₀  (at 4.2 K).

1. In III-V compounds, column VI impurities (e.g., S, Se, Te) that occupying column V sites act as donors. Similarly, column II impurities (e.g., Be, Zn, Cd) that occupying column III sites act as acceptors.
2. When a column IV material (e.g., Si, Ge) is used to dope III-V compounds, then they might substitute column III elements (and act as donors), or substitute column V elements   (And act as acceptors) => amphoteric dopants.
3. Doping  creates a  large change  in  the electrical  conductivity,  e.g.,  with a doping  of 10¹⁵/cm³ , the resistivity of Si changes from 2 x 10⁵ Ω-cm to 5 Ω -cm.

Posted Date: 1/11/2013 4:48:30 AM | Location : United States

Ask an Expert

Related Discussions:- Calculate the approximate donor binding energy, Assignment Help, Ask Question on Calculate the approximate donor binding energy, Get Answer, Expert's Help, Calculate the approximate donor binding energy Discussions

Write discussion on Calculate the approximate donor binding energy
Your posts are moderated

Write your message here..

Related Questions

Describe what you understand by offset voltage, a. Describe what you unders... a. Describe what you understand by 'offset voltage' and 'offset current' of op-amp.  Discuss with a neat circuit diagram the method used for minimizing offset voltage and offset cu

Torque-speed characteristics of 3-phase induction motors, Torque-Speed Char... Torque-Speed Characteristics of 3-Phase Induction Motors Because the torque-slip characteristic is one of themost important aspects of the inductionmotor, we will now develop a

Determine the percentage drop in load current, Q. A practical current sourc... Q. A practical current source is represented by an ideal current source of 200 mA along with a shunt internal source resistance of 12 k. Determine the percentage drop in load curr

Show the analog voltage, a) Write a program that will read and show the ana... a) Write a program that will read and show the analog voltage on pin PE7 approximately once every second. b) Write a program that will read and show in decivolts the analog volt

Wireless and communication, With a maximum excess delay of and a chip durat... With a maximum excess delay of and a chip duration of , the multipath components fall in delay bins. This means that we experience leakage of energy between chips and the channel i

Explain the purpose of the global descriptor table register, Explain the pu... Explain the purpose of the global descriptor table register. The GDTR stand for global descriptor table register and IDTR stand for interrupt descriptor table register conta

Three phase steam turbine generator, A 3 phase 400 volt(line to line) wye c... A 3 phase 400 volt(line to line) wye connected synchronous motor has Xs= 1 ohm per phase and a negligible armature resistance. The field current is so adjusted that the internal(in

Programming, ELEC 132 COURSEWORK – ADC This work will be assessed based... ELEC 132 COURSEWORK – ADC This work will be assessed based on program demonstration (during lab sessions) and design. You will also have to submit your c-source codes as word o

Hamming window and zero padding, This question investigates the effect of e... This question investigates the effect of extending the data set with zero-padding & of the appropriate time in the workflow to apply a window function. To get finer resolution in t

Compare mosfet with jfet, Q. Compare MOSFET with  JFET? a. In enhanceme... Q. Compare MOSFET with  JFET? a. In enhancement and depletion types of MOSFET,the transverse electric field induced across an insulating layer deposited on the semiconductor ma