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The substrate concentration of a N-type semiconductor is ND=10^15cm^-3. the wafer is doped with NA= 1.1*10^15 cm^-3, so that a very lightly doped P-type region is created at the surface. What is the concentration of electrons in the P-type region if the semiconuctor is:A). SiB).Ge
Two thin rods of length L lie on the x axis. One of them has a charge of -Q uniformly distributed along its length and is positioned between x = -L and x = 0. The other one has a charge of +Q uniformly distributed along its length.
Find the complex impedance of the inductance. Find the phasor voltage and current, and construct a phasor diagram. Write the current as a function of time. Sketch the voltage and current to scale versus time. State the phase relationship between t..
Compare the differences in the FFT result. Explain why even though the inputs to both FFTs are the same cosine waves, the shapes of the FFTs are different. Calculate, plot and compare the results of the 512-point FFT of the above signal.
A 20-Hp, 240VDC, 4-pole Shunt motor operates at rated load and 1700rpm and an efficiency of 88%. It has armature resistance of 0.2Ω and field resistance of 240Ω. Find: a)Power input to the motor b)IFLA of the motor
An input signal of 10V at 0degrees and a frequency of 1592Hz is applied to a series RLC circuit with resistor R=100ohm, inductor L= 40mH, and a capacitor C=0.5uF. The value of the total circuit complex impedance is
The required exposure energy for a positive photoresist is 140 mJ/cm2 and for a negative photoresist is 9 mJ/cm2. Assuming negligible times for loading and unloading wafers, compare the wafer throughput for positive photoresist and negative photor..
The current flowing through a 300-mH inductance is given by 5exp(-200t) A, in which time t is in seconds. A) Find an expression for the voltage in terms of t. B) Find an expression for the power in terms of t.
AC Analysis Gain at Midband (with bypass capacitor in circuit) Connect the bypass capacitor using the switch.
A perfect conductor 2m long is moved at a speed of 36 Km/hr through a magnetic field having a flux density of 1.0 T. If a 1 resistor is connected across the ends of the conductor, calculate: (a) The induced voltage (b) The current in the circuit
3-singlephase 2 winding transformers, each rated 500 MVA, 13.8/199.2 kV, with leakage reactance Xeq = 0.10 per unit, are connected to form a three-phase bank. Winding resistances and exciting current are neglected.
The junction capacitance of a silicon pn junction is 1.83 pF at T = 300 K when the anode and cathode are held at the same voltage. The concentration of donor atoms in the n-region of the junction is 1016 cm ^-3
Assume white Gaussian noise of zero means and power spectral density No/2 is added to the signal at the receiver input. Find the expression for SNRout (SNR at the output of the receiver)
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