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The output voltage of an AM transmitter is given by 500(1+.4sin3140t)sin6.28x107t. This voltage is fed to a load of 800 ohms. Determine the following.
Discuss the differences between series and parallel circuits. What are some advantages and disadvantages of each type Discuss why the total power equals the sum of the individual values of power, whether a series circuit or a parallel circuit is u..
A delay function should be created such that each time a new value is to be displayed on the oscilloscope it is followed by the determined time delay such that all data is output via the port at a rate of 2Khz. Change the time delay such that the ..
Find Rin, Avo, and Ro. Also, if a load resistance of 10k ohm is connected to the output, what overall voltage gain Gv is realized. Now, if a 0.2 V peak sine wave signal is required at the output, what must the peak amplitude of Vsig be.
your new network assistant has ordered a batch of rj-11 connectors to keep in reserve for building network cables on
At 0°C the circuit is balanced and at this temperature the RTD has a resistance of 200 W. Determine the change in output voltage for a 1°C change in temperature now assuming the meter has an internal impedance of 8,000 W.
It is often preferred to use a FET for the RF amplifier in an AM receiver. Can you explain why?
what are the octal values of the four 8-bit bytes in the 32-bit number with octal representation 321076543218
How can you design a high gain (at least 20dB) operational amplifier with only pmos transistors In most designs, they include both nmos and pmos transistors. Is it possible to substitute the pmos for the nmos
The four alkaline battery cells store a total of 200 watt-seconds of energy. If the cassette player is drawing a constant 10mA from the battery pack, how long will the cassette operate at normal power
A shunt regulator utilizing a zener diode is biased on through a 100 resistor. Determine the change in the regulated output voltage for the two situations below: a) VI changes +2.0 V, ILoad constant b) ILoad changes +100 mA, VI constan..
Calculate the required thickness [in x-direction] of a silicon wafer in nm to create an 0.2 eV energy difference between the two lowest Enx energy states, use mn*= 0.3 x mo with mo = 9.11x10-31 kg. Assume the y and z-direction infinitely long.
A long narrow rod has an atomic density of 5*1028 m-3. Each atom has the polarizability of 10-40 F m2. Find the internal electric field when an axial field of 1 V/m is applied.
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