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UJT (Electronic devices and circuits), Electrical Engineering
EXPLAIN UJT WITH ALL SUBTOPICS CONSISTS
Posted Date: 11/7/2012 4:30:51 AM | Location : USA
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Determine the forced component of the voltage, Q. Consider an RL series cir...
Q. Consider an RL series circuit excited by (a) v(t) = 20e -2t V, and (b) v(t) = 20 V. Determine the forced component of the voltage across the inductor for R = 2 and L = 2H.
Digital control system, a digital computer controlled rolling mill regulato...
a digital computer controlled rolling mill regulator system..
Introduction to electronics, Explain the difference between a microprocesso...
Explain the difference between a microprocessor and an embedded microcontroller
How to connect the coil to the supply, A coil has an inductance of 1.2H and...
A coil has an inductance of 1.2H and a resistance of 40? and is connected to a 200 V, d.c. supply. Verify the approximate value of the current flowing 60 ms after connecting the co
Define voltage divider rule, Define voltage divider rule Voltage drop a...
Define voltage divider rule Voltage drop at every resistor that connected by serial can be search by using voltage divider rules (VDR).
Computer-aided circuit analysis using MATLAB, Q. Computer-aided circuit ana...
Q. Computer-aided circuit analysis using MATLAB ? This text does not teach MATLAB; it assumes that the student is familiar with it through previous work. Also, the book does no
Find voltage in circuit using the ideal op-amp technique, Q. Find v o in t...
Q. Find v o in the circuit shown in Figure by using the ideal op-amp technique.
What is transconductance, Q. What is transconductance? Explain its signific...
Q. What is transconductance? Explain its significance from the transfer characteristics. Transconductance is the transistor gain of the JFET; it indicates the amount of control
Electrical instrumentation, what is strain gauge
what is strain gauge
Calculate the approximate donor binding energy, Calculate the approximate d...
Calculate the approximate donor binding energy Calculate the approximate donor binding energy for Si (r = 11.7,m x n = 1.18 m 0 ) Solution: From E= m * n q 4 / 2(4 πε 0
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