Simulation of a pn junction, Electrical Engineering

Simulation of a pn Junction

An n+ p junction is fabricated on a p-type silicon substrate with NA = 8×1015 cm-3 . The n+ region has a concentration of ND = 1.5×1018 cm-3 and a junction depth of xj = 1.4 μm. The total device depth is 10 μm (from top to bottom contact).

Use Sentaurus to simulate and view the results for the following conditions:

1. Zero Bias, Uniform Doping Profiles Using uniform doping profiles, verifies the 1D and 2D doping concentration of this junction. Also plot the 1D potential across the junction to estimate the built-in potential and depletion region width. Compare the results with the theoretical values.

You may want to use a non-uniform mesh, which is denser in the top 2 μm of the device.

2. Reverse Bias, Uniform Doping Profiles Simulate the diode under reverse bias. Plot the reverse IV characteristics and extract the breakdown voltage. Compare your result with Figure in the text. What is the maximum electric field in the junction just before breakdown?

2305_Simulation of a pn Junction.png

3. Forward Bias, Uniform Doping Profiles Plot the IV relation for this diode under a forward bias between 0 and 1 V. What allows us to raise the forward bias above 0.7 V? How can this be seen from the simulation output?

Hint: Examine the change in the IV curve with increasing voltage and determine the cause of this change.

4. High Temperature, Uniform Doping Profiles The junction temperature is raised to 580°C. Simulate this junction up to a reverse bias of 12V and a forward bias of 1V. Plot and explain the IV characteristics.

5. Reverse Bias, Gaussian n+ Doping Profiles Using a Gaussian profile for the n+ region with peak concentration of 1.5×1018 cm-3 and junction depth of xj = 0.7 μm, verify the 1D and 2D doping concentration of the junction. Plot the 1D potential across the junction to estimate the built-in voltage and depletion width at equilibrium. Compare Vbi with the theoretical value and compare Vbi and junction width to those from part 2. Also, estimate the minority carrier diffusion lengths Ln and Lp.

Posted Date: 2/15/2013 12:04:40 AM | Location : United States

Related Discussions:- Simulation of a pn junction, Assignment Help, Ask Question on Simulation of a pn junction, Get Answer, Expert's Help, Simulation of a pn junction Discussions

Write discussion on Simulation of a pn junction
Your posts are moderated
Related Questions
Determine the value of capacitance to give resonance: A circuit shown in Figure having a resistance of 5 Ω, an inductance of 0.4 H and a variable capacitance in series is conn

Q. What are the advantages and disadvantages of a R-C coupled amplifier. Advantages · It has excellent frequency response. The gain is constant over the audio frequency ra

Explain in detail the various energy resources and their availability. Explain the following: (a) Types of power plants (b) Selection of power Plants

how to design 7 segment design using DSCH2 ?

V- I Characteristics When the peak  value of  applied  voltage is less than the break over   voltage  of triac  and no signal  is applied to the triac  it will block  both  pos

Q. Show Function of Compensating Plate in interferometer? In absence of plate G2 the reflected ray passes the plate G1 twice, whereas the transmitted ray does not passes even o

Q. When the quantum step size δv and the step size of f (t) are the same as in , the quantizer is said to have a gain of unity. If, on the other hand, the quantizer has a gain of K

Consider the 220-V, 1800-r/min dc motor, controlled by a three-phase fully controlled rectifier from a 60-Hz ac source. The armature-circuit resistance and inductance are 1.5  and

Factors of Contributing to Losses in Service Cables 1. Tapping of underground service cables: The service cables must be visible so that tapping of cables can be detected. U

Q. A magnetic force exists between two adjacent, parallel current-carryingwires. Let I 1 and I 2 be the currents carried by the wires, and r the separation between them. Making u