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Q. Show the Enhancement of MOSFET ?
Here also the slab of p type material called the substrate is provided. The substrate is connected to a source terminal. Many discrete devices provide an additional terminal labeled SS resulting in a four terminal device. The source and drain terminals are connected through metallic terminals to the n doped region. The gate is also connected through a metallic terminal and through an SiO2 to the p type substrate.
Here the basic construction is same as that of depletion MOSFET.The only difference is the absence of the channel as the basic construction of the device. It has the four source terminal,sorce,drain and the p type substrate. When the gate to source voltage is 0, since there is no n channel there will be no current flow. When the gate to source voltage is positive,the electrons in the p substate will be attracted towards the gate,which will result in the increase in the carriers and hence in the increase in the flow of current between the source and drain.
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