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Peak inverse Voltage
Peak inverse voltage is important parameter in the design of rectifier circuit. PIV is the maximum voltage that appears across the device during its blocking state. Hence it is applied to the SCR in the reverse direction. It is the amount of voltage the SCR can withstand in the reverse direction without having current flow.
Gate trigger current: The maximum value of gate current required to switch the device from the off state to the on state under specified conditions. The designer should consider the maximum gate trigger current as the minimum trigger current value that must be applied t the device in order to assure its proper triggering.
1. A PCM system uses 8 bits per sample and the analog signal is limited to 4.3 kHz. The PCM data is transmitted using (a) BFSK and (b) ASK. Determine the bandwidth required for tra
Mixed Mode Simulator: The circuit is preprocessed. The test points and waveform markers are located in input and output of the circuit. GND net is set like reference net.
Q. Advantages and Disadvantages of rc coupled amplifier? Advantages 1. Aids excellent frequency response.The gain is constant over the audio frequency range 2. It has l
Hello sir, m engineering final year student, we made a project as I mentioned above, I wanna add some extra feature on it, meant to modified it...want to add up some extra feature
Solid-State Control of Synchronous Motors The speed of a synchronous motor can be controlled by changing its supply frequency. With variable-frequency control, two modes of op
what is bias compensation
Describe 74LS139 memory decoder. The 74LS139 is a dual 2-to-4 line decoder. This contains two separate 2-to-4 line decoders - all with its address, output and enable connection
1. Why must a modem be used to transmit binary data through a PSTN? (1) Use sketches and additional text to describe the following modulation methods. (a) Amplitude shift key
The Octal Inverter 74LS 240 It is similar to above octal buffer but with inverter output. The logic diagram is shown in figure below . Normal 0
Apply the rule-of-thumb dc design presented in this section for a silicon npn BJT with β = 70 when the operating Q point is defined by I CQ = 15 mA and I BQ = 0.3 mA, with a dc s
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